IRS2117PBF【PDF 12/26 页】IC DRIVER MOSFET/IGBT 1CH 8-DIP

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录333

8页 9页 10页 11页 [12页]13页 14页 15页 16页

IRS211(7,71,8)(S)

DC+ BUS

OFF

I L

V S

I L

OFF

DC- BUS

Figure 8: D1 conducting

DC- BUS

Figure 9: Q2 conducting

However, in a real inverter circuit, the V S voltage swing does not stop at the level of the negative DC bus,

rather it swings below the level of the negative DC bus. This undershoot voltage is called “negative V S

transient”.

The circuit shown in Figure 10 depicts a half bridge circuit with parasitic elements shown; Figures 11 and 12

show a simplified illustration of the commutation of the current between Q1 and D2. The parasitic inductances

in the power circuit from the die bonding to the PCB tracks are lumped together in L D and L S for each switch.

When the high-side switch is on, V S is below the DC+ voltage by the voltage drops associated with the power

switch and the parasitic elements of the circuit. When the high-side power switch turns off, the load current can

momentarily flow in the low-side freewheeling diode due to the inductive load connected to V S (the load is not

shown in these figures). This current flows from the DC- bus (which is connected to the COM pin of the HVIC)

to the load and a negative voltage between V S and the DC- Bus is induced (i.e., the COM pin of the HVIC is at

a higher potential than the V S pin).

DC+ BUS

OFF

V S

OFF

V LD2

V LS2

I L

DC- BUS

Figure 10: Parasitic Elements

Figure 11: V S positive

Figure 12: V S negative

In a typical power circuit, dV/dt is typically designed to be in the range of 1-5 V/ns. The negative V S transient

voltage can exceed this range during some events such as short circuit and over-current shutdown, when di/dt

is greater than in normal operation.

International Rectifier’s HVICs have been designed for the robustness required in many of today’s demanding

applications. An indication of the IRS211(7,71,8)’s robustness can be seen in Figure 13, where there is

represented the IRS211(7,71,8) Safe Operating Area at V BS =15V based on repetitive negative V S spikes. A

negative V S transient voltage falling in the grey area (outside SOA) may lead to IC permanent damage;

viceversa unwanted functional anomalies or permanent damage to the IC do not appear if negative Vs

transients fall inside SOA.

www.irf.com

? 2008 International Rectifier

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式